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Product Description:CMOS Image sensor 4.8µm x 4.8µm 48-LCC (14.22x14.22)
Package:LCC-48Product Description:CMOS Image sensor 4.8µm x 4.8µm 84-LCC (19x19)
Package:LCC-84Product Description:CMOS Image sensor 4.8µm x 4.8µm 48-LCC (14.22x14.22)
Package:LCC-48Product Description:CMOS Image sensor 4096H x 3072V 3.2µm x 3.2µm 163-CLGA (20.88x19.9)
Package:CLGA-163Product Description:CMOS Image sensor 4096H x 3072V 3.2µm x 3.2µm 163-CLGA (20.88x19.9)
Package:CLGA-163Product Description:CMOS Image sensor 4096H x 2160V 3.2µm x 3.2µm 163-CLGA (20.88x19.9)
Package:CLGA-163Product Description:CMOS image sensor 5120H x 3840V 1.4µm x 1.4µm
Package:PBGA-78Product Description:1/2.6-inch 2.3 Mp CMOS Digital Image Sensor with Global Shutter
Package:ODCSP-83Product Description:Silicon carbide (SiC) module 1200V 80 Mω 20A three-phase bridge power module
Package:APM-32Product Description:Silicon carbide (SiC) module 1200V 80 Mω 31A full-bridge power module
Package:APM-32Product Description:Silicon Carbide (SiC) module EliteSiC, 10 mohm SiC M3S MOSFETs, 1200 V base installed 18-PIM
Package:PIM-18Product Description:Silicon Carbide (SiC) MOSFET EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L
Package:D2PAK-7Product Description:Silicon Carbide (SiC) MOSFET - EliteSiC, 70 mohm, 650 V, M2, D2PAK−7L
Package:D2PAK−7Product Description:Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L
Package:D2PAK-7Product Description:Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60mohm, 650 V, M2, TO247-3L
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET EliteSiC, 23 mohm, 650 V, M3S, TO-247-3L
Package:TO-247-3Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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