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Parameter Description
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Unit Price
Operation
Product Description:SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:SiC MOSFET through hole N Channel 650 V 40A (Tc) 132W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:SiC MOSFET Through hole N Channel 1200 V 60A (Tc) 249W (Tc) TO-247-4L (X)
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET 650 V 30A 111W TO-247-4
Package:TO-247-4Product Description:Diode 30 V 200mA Surface Mount CST2
Package:CST2Product Description:N-Channel 40 V 400A (Ta) 750W (Tc) Surface Mount L-TOGL™
Package:8-PowerBSFNProduct Description:Through Hole N Channel 800 V 10A (Ta) 50W (Tc) TO-220SIS
Package:TO-220FProduct Description:Through hole N channel 1200V 36A (Tc) 272W (Tc) TO-3P (N)
Package:TO-3PProduct Description:Through hole N-channel 1200V 100A (Tc) 431W (Tc) TO-247
Package:TO-247-3Product Description:Through hole N-channel 1200V 20A (Tc) 107W (Tc) TO-247
Package:TO-247-3Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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