sales@hkmjd.com
Service Telephone:86-755-83294757
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Model
Brand
Parameter Description
MOQ
Stock
Purchase Quantity
Unit Price
Operation
Product Description:Silicon Carbide (SiC) MOSFET EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L
Package:D2PAK-7Product Description:Silicon Carbide (SiC) MOSFET EliteSiC, 44 mohm, 650 V, M2, TOLL
Package:TOLLProduct Description:Silicon Carbide (SiC) MOSFET EliteSiC, 23 mohm, 650 V, M3S, TO-247-3L
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET EliteSiC, 40 mohm, 1200 V, M1, Die
Package:DieProduct Description:IGBT module 1000 V 164 A 396 W base with 50-PIM (93x47) silicon carbide diode
Package:PIM-50Product Description:Bluetooth 5.2 secure wireless MCU designed for smart connected devices
Package:WLCSP-40Product Description:Silicon Carbide (SiC) Module – EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology
Package:34-PIMProduct Description:8MP Hyperlux™ LH Image Sensor, BGA-75
Package:BGA-75Product Description:High-Resolution 1/2-inch CMOS Digital Image Sensor
Package:BGA-95Product Description:150V N-Channel MOSFET Transistor, Surface Mount PQFN-8 (5x6)
Package:PQFN-8Product Description:Digital Isolator 5000Vrms 4-Channel 10Mbps 100kV/µs CMTI 16-SOIC (0.295", 7.50mm wide)
Package:SOIC-16Product Description:Intelligent Power Module (IPM), 600V, 15A, EMI optimized version
Package:DIP-38Product Description:CMOS Image Sensor, 1.3 MP (SXGA), Global Shutter
Package:LCC-48Product Description:Silicon Carbide (SiC) Schottky Diode - EliteSiC, 50A, 650V, D2, TO-247-2L
Package:TO-247-2Product Description:Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-2L
Package:TO-247-2Product Description:Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-3L
Package:TO-247-3Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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