sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistor
Brand:ON
Particular Year:25+
Package:D2PAK
Delivery Date:New and original
Stock: 1500pcs
The FGB5065G2-F085 is an IGBT device manufactured by (onsemi) with the following key parameters:
IGBT type: -
Voltage - Emitter breakdown (maximum value) : 650 V
Current - Collector (Ic) (maximum value) : 78 A
Vce(on) (maximum value) at different Vge and Ic: 2.15V @ 10V, 50A
Power - Maximum: 300 W
Switching energy: -
Input type: Logic
Gate charge: 40 nC
Td (on/off) value at 25°C: -/6.7µs
Test conditions: 300V, 6.5A, 470 ohms, 5V
Operating temperature: -55°C to 175°C (TJ)
Grade: Automotive grade
Qualification: AEC-Q101
Installation type: Surface mount type
Package/Shell: D2PAK
These parameters make the FGB5065G2-F085 suitable for various application scenarios that require efficient energy conversion and high current processing, especially performing well in industrial automation and durable electronic devices.
Model
Brand
Package
Quantity
Describe
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
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