sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:ON
Particular Year:25+
Package:TDFN4
Delivery Date:New and original
Stock: 2000pcs
The NTMT125N60S5H is a high-performance MOSFET product launched by onsemi, which is particularly suitable for server and telecommunication systems. The SUPERFET V MOSFET FAST series has extremely low switching losses in hard-switching applications, which helps to maximize the system efficiency. The TDFN4 package is an ultra-thin SMD package that offers outstanding switching performance by providing a Kelvin source configuration and a low parasitic source inductance.
Main specifications
FET type: N channel
Technology: MOSFET (Metal Oxide)
Drain-source voltage (Vdss) : 600 V
Current at 25°C - Continuous drain (Id) : 22A (Tc)
Driving voltage (maximum Rds On, minimum Rds On) : 10V
The on-resistance (maximum value) at different ids and Vgs: 125 milliohms @ 11A, 10V
Vgs(th) (maximum value) at different ids: 4.3V@2.1mA
Gate charge (Qg) (maximum value) at different Vgs: 37.1N@10 V
Vgs (maximum value) : ±30V
Input capacitance (Ciss) (maximum value) at different Vds: 2037 pF @ 400 V
FET function: -
Power dissipation (maximum value) : 152W (Tc)
Operating temperature: -55°C to 150°C (TJ)
Installation type: Surface mount type
Supplier device package: 4-TDFN (8x8)
Application scenarios
The NTMT125N60S5H MOSFET is mainly applied in server and telecommunication systems, especially excelling in power management with high energy efficiency requirements.
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