sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:ON
Particular Year:25+
Package:TDFN4
Delivery Date:New and original
Stock: 2000pcs
The NTMT125N60S5H is a high-performance MOSFET product launched by onsemi, which is particularly suitable for server and telecommunication systems. The SUPERFET V MOSFET FAST series has extremely low switching losses in hard-switching applications, which helps to maximize the system efficiency. The TDFN4 package is an ultra-thin SMD package that offers outstanding switching performance by providing a Kelvin source configuration and a low parasitic source inductance.
Main specifications
FET type: N channel
Technology: MOSFET (Metal Oxide)
Drain-source voltage (Vdss) : 600 V
Current at 25°C - Continuous drain (Id) : 22A (Tc)
Driving voltage (maximum Rds On, minimum Rds On) : 10V
The on-resistance (maximum value) at different ids and Vgs: 125 milliohms @ 11A, 10V
Vgs(th) (maximum value) at different ids: 4.3V@2.1mA
Gate charge (Qg) (maximum value) at different Vgs: 37.1N@10 V
Vgs (maximum value) : ±30V
Input capacitance (Ciss) (maximum value) at different Vds: 2037 pF @ 400 V
FET function: -
Power dissipation (maximum value) : 152W (Tc)
Operating temperature: -55°C to 150°C (TJ)
Installation type: Surface mount type
Supplier device package: 4-TDFN (8x8)
Application scenarios
The NTMT125N60S5H MOSFET is mainly applied in server and telecommunication systems, especially excelling in power management with high energy efficiency requirements.
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TO220-3
5000
950V, CoolMOS™ P7 N-channel power MOSFET transistor, PG-TO220-3
INFINEON
PG-HDSOP-22
5000
600V, CoolMOS™ CFD7 N-channel power MOSFET transistor, PG-HDSOP-22
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