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Product Description:Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in
Package:TO-247GEProduct Description:N-channel SiC power MOSFET Transistors
Package:TO-263-7Product Description:N-channel SiC power MOSFET Transistors
Package:TO-263-7Product Description:Automotive N-channel SiC power MOSFET Transistors
Package:TO-263-7Product Description:N-channel SiC power MOSFET Transistors
Package:TO-263-7Product Description:1700 V 3.7A N-channel SiC power MOSFET Transistors
Package:TO-3PFM-3Product Description:650V 118A N-channel SiC power MOSFET Transistors
Package:TO-247-3Product Description:1200V, 567A, full SiC power module with built-in half-bridge trench MOS
Package:ModuleProduct Description:LCD Driver 3wire+KEYOUT 2.7-6V VQFP80 Line/Frame
Package:VQFP-80Product Description:1200V 69A Field Stop Trench IGBT Transistors for Automotive
Package:TO-247N-3Product Description:1200V 69A Field Stop Trench IGBT Transistors for Automotive
Package:TO-247N-3Product Description:1200V 69A Field Stop Trench IGBT Transistors for Automotive
Package:TO-247-4Product Description:1200V 69A Field Stop Trench IGBT Transistors for Automotive
Package:TO-247-4Product Description:Nano Cap, EcoGaN, 650V 70mΩ 2MHz GaN HEMT power level IC
Package:VQFN-46Product Description:Silicon Carbide (SiC) MOSFET Surface mount N-channel 1200 V 17A (Tj) TO-263-7LA
Package:TO-263-7Product Description:Silicon Carbide (SiC) MOSFET Surface mount N-channel 1200 V 17A (Tc) TO-263-7LA
Package:TO-263-7Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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