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Brand
Parameter Description
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Unit Price
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Product Description:250V enhanced N-channel anti-radiation MOSFET
Package:SMDProduct Description:150V enhanced N-channel anti-radiation MOSFET
Package:SMDProduct Description:Enhanced N-channel anti-radiation MOSFET, 150°C, 100V U3
Package:SMDProduct Description:Through Hole N Channel 200 V 45A (Tc) 2.23W (Ta), 40W (Tc) TO-220FM
Package:TO-220-3Product Description:MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
Package:TO-247-3Product Description:MOSFET - Power, Single N-Channel, D2PAK7 60 V, 1.55 m, 267 A
Package:D2PAK-7Product Description:MOSFET - Power, Single N-Channel 40 V, 0.92 m, 300 A
Package:5-DFNProduct Description:MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 7.3 m, 101 A
Package:TO-263-3Product Description:N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
Package:PowerFLAT-4Product Description:N-channel logic level 40 V, 2.2 mΩ max., 167 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
Package:PowerFLAT-4Product Description:Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET
Package:PowerFLAT-4Product Description:N-channel 100 V, 5 mΩ typ., 107 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
Package:PowerFLAT-4Product Description:N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET
Package:PowerFLAT-4Product Description:N‑channel 100 V, 3.2 mΩ max., 158 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
Package:PowerFLAT-4Product Description:Through Hole N Channel 1200 V 69A (Tc) 326W (Tc) PG-TO247-4-11
Package:PG-TO247-4-11Product Description:Through Hole N Channel 1200 V 17A (Tc) 109W (Tc) PG-TO247-4-14
Package:PG-TO247-4-14Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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