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Product Description:N-Channel 1200V SiC MOSFET Module
Package:9-SMPD-BProduct Description:N-Channel 1200V 47A SiC MOSFET Module
Package:SOT-227-4Product Description:High voltage IGBT transistor 2500 V 29 A 280 W through hole TO 247HV
Package:TO-247HV-3Product Description:If IGBT PT 600 V 500 A 1700 W Through hole PLUS247™-3
Package:PLUS247-3Product Description:IGBT transistor 3000 V 130 A 625 W through hole TO 264AA
Package:TO-264-3Product Description:600V, 160mΩ, 18A X2-Class Power MOSFET Transistors with Co-Pack FRED Diode
Package:ISOPLUS i4-PAC™Product Description:500V P-Channel Enhancement Mode PolarP™ MOSFET Transistors
Package:TO-252-3Product Description:IGBT Transistor XPT IGBT Copack
Package:TO-247-3Product Description:IGBT Trench 1200V 138A 650W Through Hole TO-247 (IXTH)
Package:TO-247-3Product Description:IGBT 1200 V 240 A 1500 W Through Hole TO-264 (IXYK)
Package:TO-264-3Product Description:IGBT Trench 1200V 126A 650W Through Hole TO-247 (IXTH)
Package:TO-247-3Product Description:IGBT 1700 V 36 A 280 W Through-Hole TO-247 (IXYH)
Package:TO-247-3Product Description:IGBT PT 650 V 310 A 940 W Through hole PLUS247™-3
Package:TO-247-3Product Description:Extreme Light Punch Through IGBT Transistors for 20-60 kHz Switching
Package:TO-220-3Product Description:IGBT PT 1200 V 60 A 300 W Surface mount TO-263AA
Package:TO-263Product Description:Extreme Light Punch Throungh IGBT Transistors for up to 5 - 30kHz Switching
Package:TO-220-3Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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