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Product Description:Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L
Package:TO-247-2Product Description:Automotive main drive 900V, 2.2mOhm unilateral direct cooling 6-Pack silicon carbide power module
Package:SSDC-39Product Description:Silicon Carbide (SiC) Module 900V, Single Side Direct Heat Dissipation 1.7 mOhm, 900V, 6-Pack
Package:SSDC-39Product Description:Automotive main drive 900V, 2.2mOhm unilateral direct cooling 6-Pack silicon carbide power module
Package:SSDC-39Product Description:Silicon Carbide (SiC) Module – Single Side Direct Heat Dissipation, 1.7 mOhm 900V 6-Pack
Package:SSDC-39Product Description:IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L
Package:TO-247-3Product Description:IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-3L
Package:TO-247-3Product Description:IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-4L
Package:TO-247-4Product Description:IGBT - Automotive Grade 1200 V 40 A, TO-247-4L
Package:TO-247-4Product Description:Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1
Package:TO-247-2Product Description:Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 13.5mohm, 750V, M2, TO247−4L
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−3L
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S
Package:TO-247-4Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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