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Product Description:2300V 6.0 mΩ Silicon Carbide Half-Bridge Module
Package:ModuleProduct Description:2300V 7.5 mΩ Silicon Carbide Half-Bridge Module
Package:ModuleProduct Description:2300V 5.0 mΩ Silicon Carbide Half-Bridge Module
Package:ModuleProduct Description:Silicon Carbide (SiC) MOSFET N channel 900 V 11A (Tc) 50W (Tc) TO-263-7
Package:TO-263-7Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 17A (Tc) 97W (Tc) TO-247-3
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET N channel 1200 V 7.2A (Tc) 40.8W (Tc) TO 263-7
Package:TO-263-7Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 36A (Tc) 192W (Tc) TO-247-3
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 90A (Tc) 463W (Tc) TO 247-3
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 115A (Tc) 556W (Tc) TO-247-4
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 66A (Tc) 326W (Tc) TO-247-4
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 66A (Tc) 326W (Tc) TO-247-3
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 650 V 120A (Tc) 416W (Tc) TO-247-3
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1000 V 35A (Tc) 113.5W (Tc) TO 247-4L
Package:TO-247-4Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 900 V 36A (Tc) 125W (Tc) TO-247-3
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1700 V 72A (Tc) 520W (Tc) TO-247-3
Package:TO-247-3Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 100A (Tc) 405W (Tc) TO 247-4L
Package:TO-247-4Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
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E-mail:sales@hkmjd.com
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