sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Single Tube
Brand:ON
Particular Year:25+
Package:TO-247-4
Delivery Date:New and original
Stock: 2000pcs
The FGY4L75T120SWD is a 7th-generation diode that adopts the novel field-terminated 7th-generation IGBT technology and is packaged in the TO-247 4−lead. This IGBT features the best performance, with low switching and conduction losses, and can achieve high-efficiency operation in various applications such as solar inverters, UPS and ESS.
Technical Specification
The main specifications of FGY4L75T120SWD include:
Configuration: Single
The maximum collector-emitter voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 1.37V
Maximum gate/emitter voltage: 20 V
Continuous collector current at 25 C: 150 A
Pd- Power dissipation: 652 W
Minimum operating temperature: -55 ° C
Maximum operating temperature: + 175 ° C
Series: FGY4L75T120SWD
Package/Box: TO-247-4
Installation style: Through Hole
The maximum continuous current Ic at the collector: 75 A
Gate-emitter leakage current: 400 nA
Product type: IGBTs
Application field
The FGY4L75T120SWD is widely used in the following fields:
Solar inverter
UPS
Energy storage system
Model
Brand
Package
Quantity
Describe
ROHM
TO-247GE
1500
Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in, TO-247GE
Microchip
TO-264-3
1500
Insulated Gate Bipolar Transistor (IGBT) PT MOS 8 Combi 900 V 80 A TO-264
Microchip
TO-264-3
1500
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TO-247-3
1500
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Microchip
TO-247-3
2000
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Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 1200 V 35 A TO 264 MAX
Microchip
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1500
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Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) FG, IGBT-CombI, 600V, TO-264 MAX, RoHS
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