sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide JFET Transistors
Brand:ON
Particular Year:25+
Package:TO-247-3
Delivery Date:New and Original
Stock: 2000pcs
UJ3C120070K3S SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true “drop-in replacement”to Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices. Available in the TO247-3 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.
Features Of UJ3C120070K3S
Typical On-resistance RDS(on),typ: 70 mΩ
Maximum Operating Temperature of 175 °C .
Excellent Reverse Recovery
Low Gate Charge
Low Intrinsic Capacitance
ESD Protected: HBM Class 2
This Device is Pb-Free, Halogen Free and is RoHS Compliant
Typical Applications Of UJ3C120070K3S
EV Charging
PV Inverters
Switch Mode Power Supplies
Power Factor Correction Modules
Motor Drives
Induction Heating
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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