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Product Description:Silicon Carbide (SiC) Schottky Diodes - EliteSiC 50A 1200V D3 TO-247-2L Package
Package:TO-247-2LProduct Description:MOSFET - Power, Single N-Channel 40 V, 0.92 m, 300 A
Package:5-DFNProduct Description:MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 7.3 m, 101 A
Package:TO-263-3Product Description:Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 10 A, 360 mohm, DPAK
Package:TO-252-3Product Description:Isolated High Current IGBT/MOSFET Gate Driver
Package:SOIC-8Product Description:5kVrms Isolated Dual 4.5/9A Gate Driver
Package:SOIC-16Product Description:CMOS Image Sensor, 0.3 MP (VGA), Global Shutter
Package:LCC-48Product Description:MOSFET - Power, Single P-Channel -40 V, 9.5 mΩ, -77 A
Package:5-DFNProduct Description:40A Stackable Synchronous Buck Regulator
Package:WQFN-34Product Description:150V N-Channel Power Trench® MOSFET Transistors
Package:TO-247-3Product Description:1200V Dual Boost Power Module
Package:ModuleProduct Description:120V Single N-Channel Power MOSFET Transistors
Package:PQFN-8Product Description:800V N-Channel, SUPERFET III, Power MOSFET Transistors
Package:TO-220-3Product Description:1700V, 25A Silicon Carbide (SiC) Schottky Diodes
Package:TO-247-2Product Description:High-Frequency, High Side and Low Side Gate Driver
Package:WDFN-10Product Description:Single 6A High-Speed, Low-Side SiC MOSFET Gate Drivers
Package:QFN-24Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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