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The FGAF40N60SMD is a 600 V insulated gate bipolar transistor (IGBT), mainly used in power electronic devices. This IGBT has the following main specifications:

Configuration: Single

The maximum collector-emitter voltage VCEO: 600 V

Collector-emitter saturation voltage: 1.9V

Maximum gate/emitter voltage: -20V, 20V

Continuous collector current at 25 C: 80 A

Pd- Power dissipation: 115 W

Minimum operating temperature: -55 ° C

Maximum operating temperature: + 175 ° C

Series: FGAF40N60SMD

Package/Box: TO-3PF

Installation style: Through Hole

Gate-emitter leakage current: 400 nA

Product type: IGBT Transistors

Unit weight: 7 g

Application field

The FGAF40N60SMD is suitable for circuits that require high voltage and large current processing, and is commonly used in industrial control, motor drive, power management and other fields. Because of its high efficiency and stability, it is widely used in various electronic devices that require high efficiency energy conversion ‌.

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