sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Automotive Certified IGBTs
Brand:ON
Particular Year:25+
Package:TO-247-4
Delivery Date:New and original
Stock: 2000pcs
The AFGH4L25T120RWD is an AEC Q101 certified insulated gate bipolar transistor (IGBT) with a robust and cost-effective field stop VII trench structure. Youdaoplaceholder0 IGBTs offer superior performance in demanding switching applications with low on-state voltages and minimal switching losses, optimizing performance for both hard-switching and soft-switching topologies in automotive applications.
Technical Specification
The main specifications of AFGH4L25T120RWD include:
Configuration: Single
The maximum collector-emitter voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 1.37V
Maximum gate/emitter voltage: 20 V
Continuous collector current at 25 C: 50 A
Pd- Power dissipation: 416 W
Minimum operating temperature: -55 ° C
Maximum operating temperature: + 175 ° C
Series: AFGH4L25T120RWD
Package/Box: TO-247-4
Installation style: Through Hole
The maximum continuous current Ic at the collector: 25 A
Gate-emitter leakage current: 400 nA
Application field
Youdaoplaceholder0 is widely used in the following fields:
PTC heaters for hybrid and pure electric vehicles
Electric compressors for hybrid vehicles and pure electric vehicles
OBC
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
2000
Insulated Gate bipolar Transistor (IGBT) FS7 1200V 25A SCR IGBT STAND ALONE TO247 4L
ST
HU3PAK-7
2000
650 V, 30 A automotive-grade grooved grid field cut-off low-loss M series IGBT
INFINEON
Module
3000
HybridPACK™ Drive G2 CoolSiC™ - Compact 1200V/310A B6 Bridge Power Module
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