sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:ON
Particular Year:25+
Package:D2PAK
Delivery Date:New and original
Stock: 2000pcs
The NTB095N65S3HF device is A 650 V, 36 A N-channel power MOSFET. It adopts a D2PAK package and is produced by (ON), belonging to its SUPERFET III MOSFET series. The NTB095N65S3HF is suitable for various power supply systems, enabling system miniaturization and higher energy efficiency.
Technical Specification
FET type: N channel
Technology: MOSFET (Metal Oxide)
Drain-source voltage (Vdss) : 650 V
Current at 25°C - Continuous drain (Id) : 36A (Tc)
Driving voltage (maximum Rds On, minimum Rds On) : 10V
The on-resistance (maximum value) at different ids and Vgs: 95 milliohms @ 18A, 10V
Vgs(th) (maximum value) at different ids: 5V@860 µA
Gate charge (Qg) (maximum value) at different Vgs: 66 nC@10 V
Vgs (maximum value) : ±30V
Input capacitance (Ciss) (maximum value) at different Vds: 2930 pF @ 400 V
FET function: -
Power dissipation (maximum value) : 272W (Tc)
Operating temperature: -55°C to 150°C (TJ)
Installation type: Surface mount type
Supplier device packaging: TO-263 (D2PAK)
Youdaoplaceholder0 Application fields
NTB095N65S3HF is suitable for circuits that require high voltage and high current, especially for power systems that require high performance and reliability .
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