sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide JFET Transistors
Brand:ON
Particular Year:25+
Package:TO-247-3
Delivery Date:New and Original
Stock: 2000pcs
UF3C120040K3S SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true “drop-in replacement”to Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices. Available in the T0247-3 package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.
Features Of UF3C120040K3S
Typical On-resistance RDS(on)typ of 35 mΩ
Maximum Operating Temperature of 175 °C
Excellent Reverse Recovery
Low Gate Charge
Low Intrinsic Capacitance
ESD Protected, HBM Class 2
TO247-3 Package for Faster Switching, Clean Gate Waveforms
This Device is Pb-Free, Halogen Free and is ROHS Compliant
Typical Applications Of UF3C120040K3S
EV Charging
PV Inverters
Switch Mode Power Supplies
Power Factor Correction Modules
Motor Drives
Induction Heating
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