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The IXFH60N65X2-4 is an N-channel power MOSFET introduced by IXYS, belonging to the HiPerFET™ X2-Class series, packaged in a TO-247-4L package, and suitable for applications such as high-frequency switching power supplies, motor drives, and industrial inverters. This device employs super-junction technology, offering low on-resistance (RDS(on)), high current-carrying capacity, and excellent avalanche withstand capability, significantly enhancing system efficiency and reliability.

IXFH60N65X2-4 Features

High voltage rating: 650V drain-source voltage (VDS), suitable for high-voltage applications such as industrial power supplies and new energy inverters.

High current capability: 60A continuous drain current (ID) at 25°C case temperature, with a pulse current of 120A, meeting the demands of transient high loads.

Low on-resistance: 52mΩ (maximum) at 10V VGS and 30A ID, reducing conduction losses.

Fast switching performance: Gate charge (Qg) = 108nC @10V, optimising high-frequency drive efficiency.  

Rise time 23ns / fall time 12ns, suitable for PWM control applications.

Robust design: 780W maximum power dissipation (case temperature 25°C), supporting high-power applications.  

Avalanche energy withstand capability, enhancing resistance to voltage surges.  

Wide temperature operating range: -55°C to +150°C (junction temperature), suitable for harsh industrial environments.  

TO-247-4L package: Through-hole mounting with integrated heat sink, optimising thermal performance.

Low package inductance: reduces high-frequency switching noise.

IXFH60N65X2-4 Typical Applications

Power conversion: PFC (power factor correction) circuits, DC-DC converters.  

Motor drives: industrial servo systems, electric vehicle auxiliary motors.  

Inverters: solar inverters, UPS uninterruptible power supplies.

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