sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Single Tube
Brand:IXYS
Particular Year:25+
Package:TO-264-3
Delivery Date:New and original
Stock: 2000pcs
The IXXK100N60B3H1 is an IGBT (Insulated Gate Bipolar Transistor), mainly used in switching applications ranging from 10 to 30kHz. This product has the following main parameters:
IGBT type: PT
Voltage - Emitter breakdown (maximum value) : 600 V
Current - Collector (Ic) (maximum value) : 200 A
Current-collector pulse (Icm) : 440 A
Vce(on) (maximum value) at different Vge and Ic: 1.8V @ 15V, 70A
Power - Maximum value: 695 W
Switching energy: 1.9mJ (on), 2mJ (off)
Input type: Standard
Gate charge: 143 nC
Td (on/off) value at 25°C: 30ns/120ns
Test conditions: 360V, 70A, 2 ohms, 15V
Reverse recovery time (trr) : 140 ns
Operating temperature: -55°C to 150°C (TJ)
Installation type: Through hole
Packaging/Shell: TO-264-3
Application field
The IXXK100N60B3H1 is mainly applied in the field of power electronics, especially in power management and switch control. Due to its high performance and suitability for high-frequency switching, it is often used in circuit designs that require high efficiency and fast response .
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-3
2000
Insulated gate bipolar transistor (IGBT) channel 650 V 120 A 395 W through-hole TO-247-3
INFINEON
TO-252-3
2000
1200 V, 8 A hard-switching TRENCHSTOP™ IGBT7 S7 single-tube device
INFINEON
TO-263-3
2000
1200 V, 15 A hard-switching TRENCHSTOP™ IGBT7 S7 single-tube device
INFINEON
TO-263-3
2000
1200 V, 8 A hard-switching TRENCHSTOP™ IGBT7 S7 single-tube device
INFINEON
TO-263-3
2000
1200 V, 3 A hard-switching TRENCHSTOP™ IGBT7 S7 single-tube device
INFINEON
TO-247-3
2000
A 1350 V IGBT monolithic integrated reverse conduction diode in TO247 package
IXYS
TO-247AD
2000
Insulated gate bipolar transistor (IGBT) PT 600 V 66 A 190 W Through-hole TO-247AD
IXYS
TO-264-3
2000
Insulated Gate bipolar Transistor (IGBT) XPT Gen4 1200V 85A TO-264
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
IXGH28N60B3D1
The IXGH28N60B3D1 insulated gate bipolar transistor (IGBT) offers switching capability up to 150 kHz and a current range of 66A. The combination of high switching speed and low conduction loss provides power supply designers with a new high-value swit…IXYK85N120C4H1
The IXYK85N120C4H1 insulated gate bipolar transistor (IGBT) was developed using XPT thin wafer technology and trench IGBT process. This transistor has low thermal resistance and is optimized to achieve low switching loss. Its characteristics and techn…IXYH40N120B4H1
The IXYH40N120B4H1 1200V grooved XPT™ insulated gate bipolar transistor (IGBT) was developed using XPT thin wafer technology and grooved IGBT process. This transistor has low thermal resistance and is optimized to achieve low switching loss. This pro…IXYN180N65A5
The IXYN180N65A5 module features a rated voltage of 650V, a current range of 180A, and a low gate charge. This product is optimized for applications that require a switching frequency of 0 to 5kHz and has the following main specifications:IGBT type: -…IXYK220N65A5
The IXYK220N65A5 is an IGBT (insulated gate bipolar transistor) that belongs to the Gen5 XPT™ family . This product has the following main specifications:IGBT type: Grooved field cut-offVoltage - Emitter breakdown (maximum value) : 650 VCurrent - C…IXA37IF1200HJ
The IXA37IF1200HJ device is manufactured using the advanced GenX3 IGBT process and the extremely light through (XPT) design platform, featuring high current handling capacity, high-speed switching capability, low total energy loss and low current drop…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: