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The IXYK85N120C4H1 insulated gate bipolar transistor (IGBT) was developed using XPT thin wafer technology and trench IGBT process. This transistor has low thermal resistance and is optimized to achieve low switching loss. Its characteristics and technical specifications are as follows:

Characteristics

Optimized for low switching loss

Positive thermal coefficient VCE(sat)

International standard packaging

High current processing capacity

High power density

The gate drive requirements are low

Reverse parallel sonic diodes

The IXYK85N120C4H1 has the following main specifications:

Configuration: Single

The maximum collector-emitter voltage VCEO: 1.2 kV

Collector-emitter saturation voltage: 2 V

Maximum gate/emitter voltage: -20V, 20V

Continuous collector current at 25 C: 220 A

Pd- Power dissipation: 1.15 kW

Minimum operating temperature: -55 ° C

Maximum operating temperature: + 175 ° C

Packaging/Box: TO-264-3

Installation style: Through Hole

The maximum continuous current Ic of the collector: 220 A

Gate-emitter leakage current: 100 nA

Product type: IGBT Transistors

The IXYK85N120C4H1 transistor is highly suitable for applications in power inverters, motor drives, power factor correction (PFC) circuits, and battery chargers.

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