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The IXFH60N50P3 is an N-channel power MOSFET belonging to the HiPerFET™ Polar3™ series designed for high power switching applications. Its main features include low on-resistance, fast switching performance, and high withstand voltage, making it suitable for motor drive, power management, industrial control, and other applications.

Product Attributes (IXFH60N50P3)

Product Category: MOSFETs

Technology: Si

Mounting Style: Through Hole

Package / Case: TO-247-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds-Drain-source breakdown voltage: 500 V

Id-Continuous drain current: 60 A

Rds On-drain on-resistance: 100 mOhms

Vgs - gate-source voltage: - 30 V, + 30 V

Vgs th-Gate-source threshold voltage: 5 V

Qg-gate charge: 96 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-power dissipation: 1.04 mW

Channel mode: Enhancement

Trade name: HiPerFET

Configuration: Single

Fall time: 8 ns

Forward transconductance - min: 60 S, 35 S

Product Type: MOSFETs

Rise time: 16 ns

Typical Applications (IXFH60N50P3)

Motor drives: industrial motors, servo systems, power tools.

Power management: switching power supplies (SMPS), DC-DC converters, inverters.

Automotive electronics: 12V/24V systems (e.g. battery management, on-board charging).

Industrial control: PLC, power conditioning, welding machines.

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