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Shenzhen  Mingjiada Electronics Co., Ltd.

Service Telephone:86-755-83294757

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C2M0080120D

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 36A (Tc) 192W (Tc) TO-247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C2M0025120D

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 90A (Tc) 463W (Tc) TO 247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0016120K1

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 115A (Tc) 556W (Tc) TO-247-4

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0040120K1

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 66A (Tc) 326W (Tc) TO-247-4

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0040120D

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 66A (Tc) 326W (Tc) TO-247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0015065D

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 650 V 120A (Tc) 416W (Tc) TO-247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0065100K

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1000 V 35A (Tc) 113.5W (Tc) TO 247-4L

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0065090D

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 900 V 36A (Tc) 125W (Tc) TO-247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C2M0045170D

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1700 V 72A (Tc) 520W (Tc) TO-247-3

Package:TO-247-3
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0021120K1

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 100A (Tc) 405W (Tc) TO 247-4L

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
E3M0021120K

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 104A (Tc) 405W (Tc) TO 247-4L

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
E3M0075120K

Product Description:Silicon Carbide (SiC) MOSFET through hole N channel 1200 V 32A (Tc) 145W (Tc) TO 247-4L

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
E4M0013120K

Product Description:Silicon Carbide (SiC) MOSFET 1200 V, 13 mΩ, 153 A, TO-247-4

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C2M0280120D

Product Description:Silicon Carbide MOSFET SIC MOSFET 1200V RDS ON 280 mOhm

Package:TO-247-3
10pcs
5000
1 +
10 +
25 +
50 +
>=100
E3M0060065D

Product Description:650V, 60mΩ, 37A Silicon Carbide Power MOSFET Transistors TO-247-3

Package:TO-247-3
10pcs
2000
1 +
10 +
25 +
50 +
>=100
E3M0060065K

Product Description:650V, 60mΩ, 37A Silicon Carbide Power MOSFET Transistors TO-247-4

Package:TO-247-4
10pcs
2000
1 +
10 +
25 +
50 +
>=100
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Contact Number:86-755-83294757

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Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong

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