sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
E3M0075120K is A 1200 V, 75 mΩ, 32 A E series automotive silicon carbide power MOSFET, designed to meet automotive standards, with PPAP function of N-channel enhanced mode, moisture resistant MOSFET. It uses Wolfspeed's third-generation hardening technology to deliver the industry's lowest switching loss and highest quality factor.
Specifications of E3M0075120K:
Channel mode: Enhancement
Configuration: Single
Descent time: 11 ns
Forward transconductance - Minimum: 11 S
Id- Continuous drain current: 32 A
Maximum operating temperature: + 175°C
Minimum operating temperature: -55 °C
Installation style: Through Hole
Number of channels: 1 Channel
Package/housing: TO-247-4
Pd- Power dissipation: 145 W
Product type: SiC MOSFETS
Qg- Grid charge: 55 nC
Qualification: AEC-Q101
Rds On- drain-source on-resistance: 75 mOhms
Rise time: 22 ns
Series: E-Series
Factory packaging quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor polarity: N-Channel
Typical shutdown delay: 29 ns
Typical connection delay: 8 ns
Vds- drain-source breakdown voltage: 1.2kV
Vgs - grid - source voltage: -8 V, + 19 V
Vgs TH-gate source threshold voltage: 3.6V
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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