sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-3
Delivery Date:New and original
Stock: 3000pcs
The C2M0080120D is A 1200 V, 36 A silicon carbide power MOSFET that offers world-class efficiency with the lowest switching loss in its class and ultra-high switching frequency. These MOSFETs are optimized for energy-critical high-voltage applications such as high-voltage power supplies, auxiliary power electronics circuits, 3-10kW solar inverters, industrial motor drivers, high-power DC data center power system architectures, and power factor correction circuits.
Specifications of C2M0080120D:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 36A (Tc)
Drive voltage (Max Rds On, min Rds On) : 20V
On-resistance (Max.) at different ids and Vgs: 98 milliohm @ 20A, 20V
Vgs(th) (Max.) : 4V@5mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 62 N@5 V
Vgs (Max.) : +25V, -10V
Input capacitance (Ciss) for different Vds (Max.) : 950 PF-@1000 V
FET function: -
Power dissipation (Max.) : 192W (Tc)
Operating temperature: -55°C ~ 150°C (TJ)
Installation type: Through hole
Supplier device package: TO-247-3
Package/housing: TO-247-3
Basic product number: C2M0080120
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
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Wolfspeed (NYSE: NYSE) is a market leader in the global adoption of silicon carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future, and our product portfolio includes silicon carbi…
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