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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-3
Delivery Date:New and original
Stock: 3000pcs
The C3M0065090D is A 900 V, 65 mΩ, 36 A silicon carbide power MOSFET based on third-generation technology with a wide creepage distance and a gap distance (~8mm) between drain and source. The device is optimized for high frequency power electronics applications. These include: renewable energy inverters, electric vehicle charging systems and three-phase industrial power supplies.
Specifications of C3M0065090D:
Channel mode: Enhancement
Configuration: Single
Descent time: 25 ns
Forward transconductance - Minimum value: 11.6 S
Id- Continuous drain current: 36 A
Maximum operating temperature: + 150°C
Minimum operating temperature: -55 °C
Installation style: Through Hole
Number of channels: 1 Channel
Package/housing: TO-247-3
Package: Tube
Pd- Power dissipation: 125 W
Product: Power MOSFETs
Product type: SiC MOSFETS
Qg- grid charge: 30.4 nC
Rds On- drain-source on-resistance: 90 mOhms
Rise time: 36 ns
Factory packaging quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor polarity: N-Channel
Type: Silicon Carbide MOSFET
Typical shutdown delay: 28 ns
Typical connection delay: 21 ns
Vds- drain-source breakdown voltage: 900 V
Vgs - grid - source voltage: -8 V, + 18 V
Vgs TH-gate source threshold voltage: 1.8V
Unit weight: 6 g
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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