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Product Description:1700V 1000mΩ 5.3A Gen 2 Discrete SiC MOSFET
Package:TO-263-7Product Description:1200 V, 160 mΩ, 17 A, TO-247-4 package, third generation discrete silicon carbide MOSFETs
Package:TO-247-4Product Description:1200V, 21mΩ, 114A Automotive Silicon Carbide MOSFET Transistors, TO-263-7
Package:TO-263-7Product Description:1200 V, 160 mΩ, 17 A, TO-247-3 package, third generation discrete silicon carbide MOSFETs
Package:TO-247-3Product Description:1200V 350mΩ 7.6A Gen 3 Discrete SiC MOSFET
Package:TO-247-3Product Description:1200V, 2.29mΩ, 62mm HM High Performance Half-Bridge SiC Power Module
Package:ModuleProduct Description:650V 120mΩ 21A Gen 3 Discrete SiC MOSFET
Package:TO-263-7Product Description:1200V 75 mΩ 30A Gen 3 Discrete SiC MOSFET
Package:TO-263-7Product Description:1200V, 8mΩ Half-Bridge Silicon Carbide Power Module
Package:ModuleProduct Description:650V 60mΩ 36A Gen 3 Discrete SiC MOSFET
Package:TO-263-7Product Description:650 V, 10 A, TO-220-2 package, 6th generation discrete silicon carbide Schottky diode
Package:TO-220-2Product Description:650 V, 10 A, TO-263-2 package, 6th generation discrete silicon carbide Schottky diode
Package:TO-263-2Product Description:650 V, 30 A, TO-247-3 package, 6th generation discrete silicon carbide Schottky diode
Package:TO-247-3Product Description:1200V Silicon Carbide (SiC) MOSFET Transistor, TO-263-7
Package:TO-263-7Product Description:1200V 32mΩ 63A Gen 3 Discrete SiC MOSFET
Package:TO-247-3Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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