sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
E3M0021120K is A 1200 V, 21 mΩ, 104 A E series automotive silicon carbide power MOSFET, designed to meet automotive standards, with PPAP function of N-channel enhanced mode, moisture resistant MOSFET. It uses Wolfspeed's third-generation hardening technology to deliver the industry's lowest switching loss and highest quality factor.
Specifications of E3M0021120K:
FET type: N channel
Technology: SiC
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 104A (Tc)
Drive voltage (Max Rds On, min Rds On) : 15V
On-resistance (Max.) at different ids and Vgs: 28.8 milliohm @ 62.1A, 15V
Vgs(th) (Max.) for different ids: 3.6V@17.1mA
Gate charge (Qg) at different Vgs (Max.) : 177 N@15 V
Vgs (Max) : +19V, -8V
Input capacitance (Ciss) for different Vds (Max.) : 5100 PF-@1000 V
Power dissipation (Max.) : 405W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Class: Automobile class
Qualification: AEC-Q101
Installation type: Through hole
Supplier device package: TO-247-4L
Package/housing: TO-247-4
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
Wolfspeed
TO-247-3
2000
N-Channel Enhancement Mode Silicon Carbide Power MOSFET Transistors
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Wolfspeed (NYSE: NYSE) is a market leader in the global adoption of silicon carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future, and our product portfolio includes silicon carbi…
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