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Parameter Description

MOQ

Stock

Purchase Quantity

Unit Price

Operation

C3M0032120K1

Product Description:1200 V, 32 mΩ, 63 A, TO-247-4 package, third generation discrete silicon carbide MOSFETs

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
E4M0015075K1

Product Description:750 V, 15 mΩ, 128 A, TO-247-4 package, fourth generation discrete silicon carbide MOSFETs

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
E4M0015075J2

Product Description:750 V, 15 mΩ, 156 A, TO-263-7 package, fourth generation discrete silicon carbide MOSFETs

Package:TO-263-7
10pcs
3000
1 +
10 +
25 +
50 +
>=100
E4M0025075K1

Product Description:750 V, 25 mΩ, 80 A, TO-247-4 package, fourth generation discrete silicon carbide MOSFETs

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
E4M0025075J2

Product Description:750 V, 25 mΩ, 84 A, TO-263-7 package, fourth generation discrete silicon carbide MOSFETs

Package:TO-263-7
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0120065L

Product Description:650V, 120mΩ, 21A Silicon Carbide MOSFET Transistor, TOLL-9

Package:TOLL-9
10pcs
2000
1 +
10 +
25 +
50 +
>=100
C3M0120065K

Product Description:650V, 120mΩ, 22A, Silicon Carbide Power MOSFET Transistor, TO-247-4

Package:TO-247-4
10pcs
2000
1 +
10 +
25 +
50 +
>=100
C3M0120065D

Product Description:650V, 120mΩ, 22A, Silicon Carbide Power MOSFET Transistor, TO-247-3

Package:TO-247-3
10pcs
2000
1 +
10 +
25 +
50 +
>=100
C3M0021120J2

Product Description:1200V, E-Series Automotive Silicon Carbide Power MOSFET Transistor, TO-263-7

Package:TO-263-7
10pcs
2000
1 +
10 +
25 +
50 +
>=100
C3M0060075K1

Product Description:750V, 60mΩ, 35A, MOS Discrete Silicon Carbide Power MOSFET Transistors, TO-247-4

Package:TO-247-4
10pcs
2000
1 +
10 +
25 +
50 +
>=100
E4M0045075J2

Product Description:750 V, 45 mΩ, 46 A, TO-263-7 package, fourth generation discrete silicon carbide MOSFETs

Package:TO-263-7
10pcs
3000
1 +
10 +
25 +
50 +
>=100
C3M0025075K1

Product Description:750V, 25mΩ, 80A, Silicon Carbide Power MOSFET Transistors, TO-247-4

Package:TO-247-4
10pcs
2000
1 +
10 +
25 +
50 +
>=100
CAB760M12HM3R

Product Description:1200V, 1.33mΩ Half-Bridge Paralleling Silicon Carbide Power Module

Package:Module
10pcs
1000
1 +
10 +
25 +
50 +
>=100
E3M0013120K

Product Description:1200 V, 13 mΩ, TO-247-4 package, third generation discrete silicon carbide MOSFETs

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
E3M0160120J2

Product Description:1200V, 160mΩ, 18A E-Series Automotive Silicon Carbide MOSFET Transistors

Package:TO-263-7
10pcs
2000
1 +
10 +
25 +
50 +
>=100
E3M0045065K

Product Description:650 V, 45 mΩ, 46 A, TO-247-4 package, third generation discrete silicon carbide MOSFETs

Package:TO-247-4
10pcs
3000
1 +
10 +
25 +
50 +
>=100
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Contact Number:86-755-83294757

Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585

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E-mail:sales@hkmjd.com

Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong

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