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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-3
Delivery Date:New and original
Stock: 3000pcs
The C3M0160120D is A 1200 V, 160 mΩ, 17 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with high blocking voltage, low on-resistance, and low capacitance high-speed switching. The MOSFET is available in a small TO-247-3 package. Typical applications include renewable energy, high-voltage DC/DC converters, switched mode power supplies (SMPS), and uninterruptible power supplies (UPS).
Specifications of C3M0160120D:
Channel mode: Enhancement
Id- Continuous drain current: 17 A
Maximum operating temperature: + 150°C
Minimum operating temperature: -55 °C
Installation style: Through Hole
Number of channels: 1 Channel
Package/housing: TO-247-3
Package: Tube
Pd- Power dissipation: 97 W
Product type: SiC MOSFETS
Qg- Grid charge: 38 nC
Rds On- drain-source on-resistance: 160 mOhms
Factory packaging quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor polarity: N-Channel
Vds- drain-source breakdown voltage: 1.2kV
Vgs - grid - source voltage: -8 V, + 19 V
Vgs TH-gate source threshold voltage: 3.6V
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 40A (Tc) 132W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 60A (Tc) 249W (Tc) TO-247-4L (X)
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