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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Wolfspeed
Particular Year:24+
Package:TO-247-3
Delivery Date:New and original
Stock: 3000pcs
The C2M0025120D is A 1200 V, 25 mΩ silicon carbide power MOSFET that delivers world-class efficiency with the lowest switching loss in its class and ultra-high switching frequency. These MOSFETs are optimized for energy-critical high-voltage applications such as high-voltage power supplies, auxiliary power electronics circuits, 3-10kW solar inverters, industrial motor drivers, high-power DC data center power system architectures, and power factor correction circuits.
Specifications of C2M0025120D:
Channel mode: Enhancement
Configuration: Single
Descent time: 28.4 ns
Forward transconductance - Min: 23.6S
Id- Continuous drain current: 90 A
Maximum operating temperature: + 150°C
Minimum operating temperature: -55 °C
Installation style: Through Hole
Number of channels: 1 Channel
Package/housing: TO-247-3
Package: Tube
Pd-power dissipation: 463 W
Product: Power MOSFETs
Product type: SiC MOSFETS
Qg- Grid charge: 406 nC
Rds On- drain-source on-resistance: 25 mOhms
Rise time: 31.6ns
Factory packaging quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor polarity: N-Channel
Type: Silicon Carbide Power MOSFET
Typical shutdown delay: 28.8 ns
Typical connection delay: 14.4 ns
Vds- drain-source breakdown voltage: 1.2kV
Vgs - grid - source voltage: -5 V, + 20 V
Vgs TH-gate source threshold voltage: 4 V
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 40A (Tc) 132W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 60A (Tc) 249W (Tc) TO-247-4L (X)
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E-mail:sales@hkmjd.com
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