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The C3M0350120J is A 1200 V, 7.2 A silicon carbide power MOSFET based on third-generation planar MOSFET technology with a high blocking voltage, low on-resistance, and low capacitance high-speed switch. The MOSFET is available in a small TO-263-7 package. Typical applications include renewable energy, high-voltage DC/DC converters, switched mode power supplies (SMPS), and uninterruptible power supplies (UPS).

Specifications of C3M0350120J:

FET type: N channel

Technology: SiCFET (Silicon carbide)

Drain-source voltage (Vdss) : 1200 V

Current at 25°C - Continuous Drain (Id) : 7.2A (Tc)

Drive voltage (Max Rds On, min Rds On) : 15V

On-resistance (Max.) at different Id and Vgs: 455 milliohm @ 3.6A, 15V

Vgs(th) (Max.) : 3.6V@1mA for different ids

Gate charge (Qg) at different Vgs (Max.) : 13 NC-@15 V

Vgs (Max) : +15V, -4V

Input capacitance (Ciss) for different Vds (Max.) : 345 PF-@1000 V

FET function: -

Power dissipation (Max.) : 40.8W (Tc)

Operating temperature: -55°C ~ 150°C (TJ)

Mounting type: Surface mount type

Supplier device package: TO-263-7

Package/housing: TO-263-8, D2PAK (7-lead + flange), TO-263CA

Basic product number: C3M0350120

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