sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:ON
Particular Year:24+
Package:D2PAK-7
Delivery Date:New and original
Stock: 3000pcs
The NTBG032N065M3S is a new 650V M3S flat SiC MOSFET family optimized for fast switching applications. The planar technology works reliably with a negative grid voltage drive and closes spikes on the grid. The series performs best with an 18V gate drive, but also works well with a 15V gate drive.
Product Attributes:
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 650 V
Id- Continuous drain current: 52 A
Rds On- drain-source on-resistance: 44 mOhms
Vgs - grid - source voltage: -8 V, 22 V
Vgs TH-gate source threshold voltage: 4 V
Qg- Grid charge: 55 nC
Package/Box: D2PAK-7
Operating temperature: -55 °C to + 175°C
Pd- Power dissipation: 200 W
Channel mode: Enhancement
Trademark: onsemi
Configuration: Single
Descent time: 9 ns
Package: Reel
Encapsulation: Cut Tape
Product type: SiC MOSFETS
Rise time: 12 ns
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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