sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:ON
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
NVH4L032N065M3S EliteSiC 650V M3S MOSFETs feature a new technology that provides superior switching performance and increased reliability compared to silicon. In addition, low on-resistance and compact chip size ensure low capacitance and low gate charge. As a result, system benefits include maximum efficiency, faster operating frequencies, higher power density, lower EMI, and smaller system sizes.
Features:
• Typical RDS (on) = 32 m@VGS = 18 V
• Ultra-low gate charge (QG (tot) = 55 nC)
• High speed switch with low capacitance (Coss = 114 pF)
• 100% avalanche test
• Complies with AEC-Q101 and supports PPAP
• Halogen-free, RoHS exempt 7a, Lead-free 2LI (secondary interconnect)
Applications:
• Car charger
• Automotive DC-DC converters for EV/HEV
Model
Brand
Package
Quantity
Describe
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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