sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) Modules
Brand:ON
Particular Year:24+
Package:APM-32
Delivery Date:New and original
Stock: 1000pcs
The NVXK2VR80WXT2 Silicon Carbide (SiC) module is a 1200V, 80mΩ three-phase bridge power module in dual-in-line package (DIP). These silicon carbide modules are compact in design and have a low total module resistance.
The NVXK2VR80WXT2 power module is an AEC-Q101 and AQG324 compliant automotion-grade device with temperature sensing and extremely low thermal resistance, making it ideal for PFC on-board chargers in xEV applications.
Features:
DIP Silicon Carbide three-phase bridge power module for on-board Charger (OBC) for xEV applications
• Creepage distance and electrical clearance comply with IEC 60664-1 and IEC 60950-1 standards
• Compact design with low overall module resistance
• Module serialization for full traceability
• Lead-free, compliant with ROHS and UL94V−0 standards
• Compliant with AEC−Q101 and AQG324 automotive standards
Applications:
PFC for on-board chargers in xEV applications
11kW to 22kW on-board charger for EV-PHEV
Model
Brand
Package
Quantity
Describe
Wolfspeed
Module
1000
Silicon carbide (SiC) module 1200V 350A base installation, 62mm, half bridge
Wolfspeed
Module
1000
Silicon carbide (SiC) module 1200V 530A base installation, 62mm, half bridge
Wolfspeed
Module
1000
1200 V, 11 mΩ, GM, T-type, industrial-grade silicon carbide (SiC) module
Wolfspeed
Module
1000
1200 V, 4 mΩ, GM, half-bridge, industrial-grade silicon carbide (SiC) module
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
UJ3C065030B3
UJ3C065030B3 SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true…NVH4L050N170M1
NVH4L050N170M1: 1700V, 45A, 53mohm, Silicon Carbide (SiC) N-Channel MOSFET Transistor, TO-247-4Model: NVH4L050N170M1Package: TO-247-4Type: Silicon Carbide (SiC) MOSFET TransistorNVH4L050N170M1 Specifications:FET Type: N-ChannelTechnology: SiC (Silicon…NTBL032N065M3S
NTBL032N065M3S: Silicon Carbide (SiC) MOSFET - 650V, 55A, N-Channel MOSFET Transistor, H-PSOF-8Model: NTBL032N065M3SPackage: H-PSOF-8Type: Silicon Carbide (SiC) MOSFET TransistorNTBL032N065M3S Product Features:Maximum junction temperature 175CThin lea…UJ4C075018K4S
UJ4C075018K4S: 750V, 18mohm, Silicon Carbide (SiC) MOSFET Transistor, TO-247-4Basic Information:Model: UJ4C075018K4SPackage: TO-247-4Type: Silicon Carbide (SiC) MOSFET TransistorFET Type: N-ChannelTechnology: SiCFET (Common Source Common Gate SiCJFET)…UJ3C065030T3S
UJ3C065030T3S: Silicon Carbide (SiC) MOSFET - 650V, 85A, N-Channel MOSFET Transistor, TO-220-3Basic Information:Model No.: UJ3C065030T3SPackage: TO-220-3Type: Silicon Carbide (SiC) MOSFET TransistorUJ3C065030T3S Product Attributes:FET Type: N-ChannelD…UJ3C120150K3S
The UJ3C120150K3S is a 1200V, 150mohm, Silicon Carbide (SiC) cascade JFET - EliteSiC transistor in a TO-247-3 package.Basic Information:Model No.: UJ3C120150K3SPackage: TO-247-3Type: Silicon Carbide (SiC) MOSFET TransistorApplications:- Electric vehic…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: