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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFET Modules
Brand:ON
Particular Year:24+
Package:Module
Delivery Date:New and original
Stock: 1000pcs
The NXH010P90MNF1PG is a power module containing a 10 m/900 V SiC MOSFET half-bridge and a thermistor in an F1 package. The recommended gate voltage for this module is 15 V to 18 V. The NXH010P90MNF1 has an improved RDS (ON) at higher voltages and lower thermal resistance.
Features:
• 10 m/900 V SiC MOSFET half-bridge
• Thermistor
• Optional pre-coated thermal interface material (TIM) or without pre-coated TIM
• Crimping pin
Typical applications:
• Solar inverter
• Uninterruptible power supply
• Charging stations for electric vehicles
• Industrial power
Model
Brand
Package
Quantity
Describe
ROHM
Module
1000
1200V, 567A, full SiC power module with built-in half-bridge trench MOS
ON
PIM-36
1000
4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC
ON
PIM-18
1000
10 mohm SiC M3S MOSFET Module, 1200 V, 2-PACK half-bridge topology, F1 package
ON
PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
ON
PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
Microchip
Module
1000
1200V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module
Microchip
SOT-227
1000
SiC MOSFET module N Channel 1200 V 55A (Tc) 245W (Tc) SOT-227 (ISOTOP®)
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E-mail:sales@hkmjd.com
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