sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:ON
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
The NTH4L032N065M3S is an EliteSiC, 32 mohm, 650 V, M3S flat SiC MOSFET. The 650V Silicon Carbide (SiC) MOSFETs offer superior switching performance and increased reliability compared to silicon devices (Si). The 650V SiC MOSFETs feature low on-resistance and a compact chip size that ensures low capacitance and low gate charge. Advantages include high efficiency, fast operating frequency, high power density, low EMI, and small system size.
Product Attributes:
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 650 V
Id- Continuous drain current: 50 A
Rds On- drain-source on-resistance: 44 mOhms
Vgs - grid - source voltage: -8 V, 22 V
Vgs TH-gate source threshold voltage: 4 V
Qg- Grid charge: 55 nC
Package/housing: TO-247-4
Operating temperature: -55 °C to + 175°C
Pd-power dissipation: 187 W
Channel mode: Enhancement
Trademark: onsemi
Configuration: Single
Descent time: 9 ns
Package: Tube
Product type: SiC MOSFETS
Rise time: 12 ns
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
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