sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFET Modules
Brand:ON
Particular Year:24+
Package:PIM-18
Delivery Date:New and original
Stock: 1000pcs
The NXH010P120M3F1PG is a power module containing a 10 m/1200 V SiC MOSFET half-bridge and a thermistor in an F1 package.
Specifications:
Transistor polarity: N-Channel
Number of channels: 2 channels
Vds- drain-source breakdown voltage: 1.2kV
Id- Continuous drain current: 105 A
Rds On- drain-source on-resistance: 14.5 mOhms
Vgs - grid - source voltage: -10 V, + 22 V
Vgs TH-gate source threshold voltage: 4.4V
Package/housing: PIM-18
Operating temperature: -40 °C to + 150°C
Pd-power dissipation: 272 W
Package: Tray
Trademark: onsemi
Configuration: Half-Bridge
Descent time: 15 ns
Height: 12.35 mm
Length: 63.3mm
Product type: MOSFET Modules
Rise time: 15 ns
Typical applications:
• Solar inverter
• Uninterruptible power supply
• Charging stations for electric vehicles
• Industrial power
Model
Brand
Package
Quantity
Describe
ON
PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
ON
PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
Microchip
Module
1000
1200V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module
Microchip
SOT-227
1000
SiC MOSFET module N Channel 1200 V 55A (Tc) 245W (Tc) SOT-227 (ISOTOP®)
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