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The NTBL023N065M3S device is a silicon carbide (SiC) MOSFET designed for fast switching applications to provide reliable performance ‌‌. The NTBL023N065M3S has a typical RDS (on) of 23 Mω at VGS = 18V, an ultra-low gate charge (QG (tot) = 69nC), and a high-speed switch with low capacitance (Coss = 152pF). The NTBL023N065M3S SiC MOSFETs are ideal for applications such as switched mode power supplies (SMPS), solar inverters, uninterruptible power supplies (UPS), energy storage systems and infrastructure, providing powerful performance for modern power management needs.

Technical parameter

Package/housing: H-PSOF-8

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 650 V

Id- Continuous drain current: 77 A

Rds On- drain-source on-resistance: 32.6 mOhms

Vgs - grid - source voltage: -8 V, + 22 V

Vgs TH-gate source threshold voltage: 4 V

Qg- Grid charge: 69 nC

Minimum operating temperature: -55 C

Max. operating temperature: + 175 C

Pd- Power dissipation: 312 W

Channel mode: Enhancement

Configuration: Single

Drop time: 9.6ns

Package: Reel

Encapsulation: Cut Tape

Product: SiC MOSFETS

Product type: SiC MOSFETS

Rise time: 15 ns

Series: NTBL023N065M3S

Transistor type: 1 N-Channel

Typical shutdown delay: 35 ns

Typical turn-on delay: 11 ns

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