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NVH4L050N170M1: 1700V, 45A, 53mohm, Silicon Carbide (SiC) N-Channel MOSFET Transistor, TO-247-4

Model: NVH4L050N170M1

Package: TO-247-4

Type: Silicon Carbide (SiC) MOSFET Transistor

NVH4L050N170M1 Specifications:

FET Type: N-Channel

Technology: SiC (Silicon Carbide Junction Transistor)

Drain-Source Voltage (Vdss): 1700 V

Current at 25°C - Continuous Drain (Id): 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On): 20V

On Resistance (Max) at Different Id, Vgs: 76 mOhm @ 35A, 20V

Vgs(th) at different Id (max): 4, 3V @ 10mA

Gate Charge (Qg) at Vgs (max): 105 nC @ 20 V

Vgs (max): +25V, -15V

Input capacitance (Ciss) at different Vds (max): 2063 pF @ 1000 V

Power Dissipation (Max): 333W (Tc)

Operating Temperature: -55°C ~ 175°C (TJ)

Mounting Type: Through Hole

Supplier Device Package: TO-247-4L

Package/Housing: TO-247-4

NVH4L050N170M1 Product Features:

18V to 20V gate drive

Typical RDS(ON) = 53 m @ VGS = 20 V

Ultra-low gate charge (QG(tot) = 105 nC)

High-speed switching, low capacitance (Coss = 98 pF)

100% avalanche tested

New 1700V M1 technology: 53 mOhm RDS(ON), low EON and EOFF losses

NVH4L050N170M1 Applications:

Flyback converters

Automotive Chargers

On-board DC-DC converter for electric/hybrid vehicles

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