sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:ON
Particular Year:25+
Package:TO-247-3
Delivery Date:New and Original
Stock: 3000pcs
The UJ3C120150K3S is a 1200V, 150mohm, Silicon Carbide (SiC) cascade JFET - EliteSiC transistor in a TO-247-3 package.
Basic Information:
Model No.: UJ3C120150K3S
Package: TO-247-3
Type: Silicon Carbide (SiC) MOSFET Transistor
Applications:
- Electric vehicle charging
- Photovoltaic inverters
- Power factor correction devices
- Motor Drivers
- Induction heating
UJ3C120150K3S Product Attributes:
FET Type: N-Channel
Technology: SiCFET (Common Source Common Gate SiCJFET)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
On Resistance (Max) at Different Id, Vgs: 180 mOhm @ 5A, 12V
Vgs(th) at different Id (max): 5.5V @ 10mA
Gate Charge (Qg) (max) at varying Vgs: 30 nC @ 15 V
Vgs (max): ±25V
Input capacitance (Ciss) at varying Vds (max): 738 pF @ 100 V
Power Dissipation (Max): 166.7W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package/Housing: TO-247-3
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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