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The 2ED2106S06F is a 650 V high-side and low-side high-speed power MOSFET and IGBT gate driver. It is packaged in DSO-8 and features a typical source current of 0.29A and a sink current of 0.7A.

Based on Infineon's SOI technology, it has excellent durability and anti-interference performance against the negative transient voltage of the VS pin. The 2ED2106S06F does not adopt a parasitic thyristor structure, so there is no parasitic latch-up effect under any temperature and voltage conditions.

The features of 2ED2106S06F include:

The operating voltage (VS node) is as high as + 650 V

VS negative transient immunity 100 V

The integration of ultra-fast, low-resistance bootstrap diodes reduces the bill of materials cost

Floating channel, used for bootstrap operation

Maximum power supply voltage: 25 V

Both channels have independent under-voltage locking (UVLO).

Propagation delay: 200 ns

HIN, LIN logical input

The logical operation of the VS pin is as high as -11 V

Input negative voltage tolerance: -5 V

Floating channels can be used to drive N-channel MOSFETs, SiC MOSFETs or IGBTs with high-side configurations

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