sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:L6491DTR
Data Manual:L6491DTR.pdf
Brand:ST
Particular Year:23+
Package:SOP14
Delivery Date:New and Original
Stock: 12000pcs
The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.
The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.
An integrated comparator is available for fast protection against overcurrent, overtemperature, etc.
All Functions
High voltage rail up to 600 V
dV/dt immunity ± 50 V/ns in full temperature range
Driver current capability: 4 A source/sink
Switching times 15 ns rise/fall with 1 nF load
3.3 V, 5 V TTL/CMOS inputs with hysteresis
Integrated bootstrap diode
Comparator for fault protections
Smart shutdown function
Adjustable deadtime
Interlocking function
Compact and simplified layout
Bill of material reduction
Effective fault protection
Flexible, easy and fast design
Model
Brand
Package
Quantity
Describe
TI
SOIC-8
15000
5A/5A Dual Gate Driver with 5V UVLO, Inverting Inputs and Enable Function
ST
PowerSSO-24
26000
Dual-channel high-side driver supporting analogue current sensing for automotive applications
ST
PowerSSO-16
20000
High-side driver with MultiSense analogue feedback for automotive applications
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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