sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:L6491DTR
Data Manual:L6491DTR.pdf
Brand:ST
Particular Year:23+
Package:SOP14
Delivery Date:New and Original
Stock: 12000pcs
The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.
The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.
An integrated comparator is available for fast protection against overcurrent, overtemperature, etc.
All Functions
High voltage rail up to 600 V
dV/dt immunity ± 50 V/ns in full temperature range
Driver current capability: 4 A source/sink
Switching times 15 ns rise/fall with 1 nF load
3.3 V, 5 V TTL/CMOS inputs with hysteresis
Integrated bootstrap diode
Comparator for fault protections
Smart shutdown function
Adjustable deadtime
Interlocking function
Compact and simplified layout
Bill of material reduction
Effective fault protection
Flexible, easy and fast design
Model
Brand
Package
Quantity
Describe
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection
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