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STGB30M65DF2 is an N-channel IGBT (Insulated Gate Bipolar Transistor) packaged in a TO-263-3 (D2PAK) package, suitable for high-power switching applications such as motor drives, power conversion, and industrial control systems. This device is based on Trench Field Stop (TFS) technology, offering a high voltage rating of 650V and a continuous collector current capability of 60A. It provides low conduction losses (2V @ 15V, 30A) and fast switching characteristics (31.6ns turn-on/115ns turn-off), making it ideal for high-efficiency power management designs.

STGB30M65DF2 Features

• Maximum junction temperature: TJ = 175 °C

• Minimum short-circuit withstand time: 6 μs

• VCE = 1.55 V (typical) at IC = 30 A

• Tight parameter distribution

• Safer parallel operation

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Soft and extremely fast-recovery anti-parallel diode

STGB30M65DF2 Specifications

Collector-emitter voltage: 650 V

Continuous collector current: 60 A

Pulse collector current: 120 A

On-voltage:    2V @ 15V, 30A

Maximum power dissipation: 258W

Gate charge: 80nC

Switching energy: 300µJ (on), 960µJ (off)

Reverse recovery time: 140ns

Operating temperature range: -55°C to +175°C

Package type: TO-263-3 (D2PAK)

STGB30M65DF2 Applications

• Motor control

• Uninterruptible power supply (UPS)

• Power factor correction (PFC)

• General-purpose inverters

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