sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Transistors
Brand:IXYS
Particular Year:24+
Package:TO-220-3
Delivery Date:New and Original
Stock: 15000pcs
IXTP160N10T Description:
IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low-voltage/high-current applications that require extremely low RDS(ON), resulting in very low power dissipation. In addition, they operate over a wide range of junction temperatures from -40°C to 175°C, making them well suited for automotive applications and other similar harsh environment applications.
IXTP160N10T Product Attributes:
Manufacturer: IXYS
Product Category: MOSFETs
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 100 V
Id-Continuous drain current: 160 A
Rds On-drain on-resistance: 7 mOhms
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-Power dissipation: 430 W
Channel mode: Enhancement
Trademark: HiPerFET
Configuration: Single
Downtime: 42 ns
Height: 9.15 mm
Length: 10.66 mm
Product Type: MOSFETs
Rise Time: 61 ns
Series: IXTP160N10
Transistor Type: 1 N-Channel
Typical Off Delay Time: 49 ns
Typical Turn-On Delay Time: 33 ns
Width: 4.83 mm
Unit Weight: 2 g
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT™ 5x6
15000
Automotive Grade N-Channel 80 V, 3.15 mOhm typical, 130 A STripFET F7 Power MOSFET, PowerFLAT 5x6 Package
ST
TO-247
8000
N-Channel 950 V, 0.110 Ohm Typ, 38 A MDmesh K5 Power MOSFET, TO-247 Package
ST
TO-247-3
1000
N-Channel 600 V, 61 mOhm Typ, 39 A MDmesh M6 Power MOSFET, TO-247 Package
ST
TO-220-3
50000
N-Channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET, TO-220FP Package
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
IXFH60N50P3
The IXFH60N50P3 is an N-channel power MOSFET belonging to the HiPerFET™ Polar3™ series designed for high power switching applications.IXGH28N60B3D1
The IXGH28N60B3D1 insulated gate bipolar transistor (IGBT) offers switching capability up to 150 kHz and a current range of 66A. The combination of high switching speed and low conduction loss provides power supply designers with a new high-value swit…IXXK100N60B3H1
The IXXK100N60B3H1 is an IGBT (Insulated Gate Bipolar Transistor), mainly used in switching applications ranging from 10 to 30kHz. This product has the following main parameters:IGBT type: PTVoltage - Emitter breakdown (maximum value) : 600 VCurrent -…IXYK85N120C4H1
The IXYK85N120C4H1 insulated gate bipolar transistor (IGBT) was developed using XPT thin wafer technology and trench IGBT process. This transistor has low thermal resistance and is optimized to achieve low switching loss. Its characteristics and techn…IXYH40N120B4H1
The IXYH40N120B4H1 1200V grooved XPT™ insulated gate bipolar transistor (IGBT) was developed using XPT thin wafer technology and grooved IGBT process. This transistor has low thermal resistance and is optimized to achieve low switching loss. This pro…IXYN180N65A5
The IXYN180N65A5 module features a rated voltage of 650V, a current range of 180A, and a low gate charge. This product is optimized for applications that require a switching frequency of 0 to 5kHz and has the following main specifications:IGBT type: -…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: