sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFET
Brand:ST
Particular Year:25+
Package:PowerFLAT™ 5x6
Delivery Date:New and Original
Stock: 15000pcs
This STL135N8F7AG N-channel power MOSFET, featuring STripFET™ F7 technology, has an enhanced trench gate structure with extremely low on-resistance, and also reduces internal capacitance and gate charge for faster, more efficient switching.
STL135N8F7AG Features
Designed for Automotive Applications and AEC-Q101 Qualified
One of the lowest RDS (on-state) devices on the market
Excellent FoM (factor of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Wettable side package
STL135N8F7AG Technical Data
FET Type: N-Channel
Technology: MOSFET (metal oxide)
Drain-Source Voltage (Vdss): 80 V
Current at 25°C - Continuous Drain (Id): 130A (Tc)
Drive voltage (max. Rds On, min. Rds On): 10V
On-resistance (max) at different Id, Vgs: 3.6 mOhm @ 13A, 10V
Vgs(th) at different Id (max): 4.5V @ 250µA
Gate Charge (Qg) (Max) at Vgs: 103 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 6800 pF @ 40 V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive Grade
Qualification: AEC-Q101
Mounting Type: Surface Mount, Wettable Sides
Supplier Device Package: PowerFlat™ (5x6)
Package/Housing: 8-PowerVDFN
STL135N8F7AG Applications
Switching Applications
Model
Brand
Package
Quantity
Describe
ST
TO-247
8000
N-Channel 950 V, 0.110 Ohm Typ, 38 A MDmesh K5 Power MOSFET, TO-247 Package
ST
TO-247-3
1000
N-Channel 600 V, 61 mOhm Typ, 39 A MDmesh M6 Power MOSFET, TO-247 Package
ST
TO-220-3
50000
N-Channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET, TO-220FP Package
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
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