sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFET
Brand:ON
Particular Year:25+
Package:SOP-8
Delivery Date:New and Original
Stock: 9000pcs
NIS5132MN4TXGHW, a high performance N-channel MOSFET, is ideal for industrial control, automotive electronics, and communication equipment due to its excellent performance and reliability.
The NIS5132MN4TXGHW is manufactured using an advanced trench gate process and has the following outstanding features:
Low on-resistance: With on-resistance (RDS(on)) as low as 3.2mΩ, the NIS5132MN4TXGHW effectively reduces on-resistance loss and improves system efficiency.
High switching speed: The NIS5132MN4TXGHW has extremely low gate charge (Qg) and output charge (Qoss), enabling high-speed switching and reduced switching losses.
Excellent avalanche tolerance: The NIS5132MN4TXGHW has excellent avalanche tolerance and can withstand high-energy avalanche breakdowns for improved system reliability.
RoHS Compliant: NIS5132MN4TXGHW is RoHS compliant to meet environmental requirements.
Product Specifications
Wide Input Voltage Range: Supports input voltages from 4.5V to 28V.
Adjustable output voltage: Output voltage can be set by external resistor.
High Efficiency: Efficiency can reach over 90% at rated load.
Overcurrent protection: Built-in overcurrent limiting function ensures circuit safety.
Package type: SOP-8 package for compact design
Operating temperature range: -40°C to 85°C
PWM modulation support: Supports PWM mode for precise load regulation.
NIS5132MN4TXGHW Wide range of applications
The NIS5132MN4TXGHW can be used in a wide range of applications that require high efficiency and reliability, such as:
Industrial control: motor drives, power conversion, inverters, etc.
Automotive electronics: electric power steering, battery management system, car charger, etc.
Communication equipment: base station power supply, server power supply, network equipment, etc.
Consumer electronics: laptop adapters, game console power supplies, LCD TVs, etc.
Model
Brand
Package
Quantity
Describe
ST
PowerFLAT™ 5x6
15000
Automotive Grade N-Channel 80 V, 3.15 mOhm typical, 130 A STripFET F7 Power MOSFET, PowerFLAT 5x6 Package
ST
TO-247
8000
N-Channel 950 V, 0.110 Ohm Typ, 38 A MDmesh K5 Power MOSFET, TO-247 Package
ST
TO-247-3
1000
N-Channel 600 V, 61 mOhm Typ, 39 A MDmesh M6 Power MOSFET, TO-247 Package
ST
TO-220-3
50000
N-Channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET, TO-220FP Package
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
UJ3C120040K3S
UJ3C120040K3S SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for …UJ3C120070K3S
UJ3C120070K3S SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for …UF3C120040K3S
UF3C120040K3S SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a…UF3C120040K4S
UF3C120040K4S is high-performance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This exhibits very fast switching using a 4-terminal T0247- package and the best reverse recove…UJ3C065030B3
UJ3C065030B3 SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true…NVH4L050N170M1
NVH4L050N170M1: 1700V, 45A, 53mohm, Silicon Carbide (SiC) N-Channel MOSFET Transistor, TO-247-4Model: NVH4L050N170M1Package: TO-247-4Type: Silicon Carbide (SiC) MOSFET TransistorNVH4L050N170M1 Specifications:FET Type: N-ChannelTechnology: SiC (Silicon…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: