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The STW48NM60N is an N-channel power MOSFET featuring second-generation MDmesh™ II technology, offering 600V high voltage withstand capability and 44A continuous drain current capability, making it ideal for high-efficiency power conversion, motor drive, and industrial applications. The device is packaged in a TO-247 package, featuring low on-resistance (typical value of 0.055Ω) and low gate charge, significantly reducing switching losses and improving system efficiency.

STW48NM60N Features

High voltage rating: 600V drain-source breakdown voltage, suitable for high-voltage applications.

Low on-resistance: 0.055Ω typical value, reducing conduction losses.

High current capability: 44A continuous drain current.

Pulse current up to: 48A.

Low gate charge: 124 nC, reducing drive losses.  

Fast switching speed: Rise time of 18 ns, fall time of 25.5 ns, suitable for high-frequency switching applications.  

Wide temperature range: -55°C to +150°C, suitable for harsh environments.  

100% avalanche tested, ensuring high reliability.

STW48NM60N Product Attributes

Product Type: MOSFET    

Technology: Si    

Mounting Style: Through Hole    

Package/Case: TO-247-3    

Transistor Polarity: N-Channel    

Number of Channels: 1 Channel    

Vds - Drain-Source Breakdown Voltage: 600 V

Id - Continuous Drain Current:    39 A    

Rds On - Drain-Source On-Resistance:    70 mOhms    

Vgs - Gate-Source Voltage:    -25 V, +25 V    

Vgs th - Gate-Source Threshold Voltage:    2 V

Qg - Gate charge:    124 nC    

Minimum operating temperature:    -55°C    

Maximum operating temperature:    +150°C    

Pd - Power dissipation:    255 W    

Channel mode:    Enhancement    

Trademark name:    MDmesh

STW48NM60N Applications

Switching applications

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