sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel MOSFET
Brand:ST
Particular Year:25+
Package:TO-220-3
Delivery Date:New and Original
Stock: 50000pcs
The STF22NM60N is an N-channel power MOSFET developed using second-generation MDmesh™ technology, a revolutionary power MOSFET that combines a vertical structure with the company's strip layout to achieve the world's lowest on-resistance and gate charge. As a result, it is suitable for the most demanding high-efficiency converters.
STF22NM60N Product Attributes
Manufacturer: STMicroelectronics
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 650 V
Id-Continuous drain current: 16 A
Rds On-drain on-resistance: 220 mOhms
Vgs - gate-source voltage: - 30 V, + 30 V
Vgs th - gate-source threshold voltage: 3 V
Qg-gate charge: 44 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-Power dissipation: 30 W
Channel mode: Enhancement
Configuration: Single
Downtime: 38 ns
Product Type: MOSFETs
Rise Time: 18 ns
Series: STF22NM60N
Transistor Type: 1 N-Channel
Typical Off Delay Time: 74 ns
Typical Turn-On Delay Time: 11 ns
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
2500
MOSFET - Power, Single N-Channel, SUPERFET V, Easy Drive, TO247-3L 600 V, 99 m, 33 A
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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