sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-channel MOSFET
Brand:ST
Particular Year:22+
Package:PowerFLAT 5x6
Delivery Date:New and Original
Stock: 1500pcs
STL220N6F7 is STMicroelectronics' N-channel power MOSFET, part of the STripFET™ F7 series, packaged in a PowerFLAT™ (5×6mm) package. It features ultra-low on-resistance (RDS(on)) and high current carrying capacity, making it ideal for high power density applications such as new energy vehicles, industrial motor drives, server power supplies, and photovoltaic inverters.
STL220N6F7 Features
Ultra-low on-resistance: 1.2mΩ (typical), significantly reducing conduction losses and improving system efficiency.
High current-carrying capability: 260A (continuous drain current, Tc=25°C), suitable for high-power switching applications.
High-speed switching performance: Gate charge (Qg) of only 98 nC, supporting switching frequencies above 500 kHz, reducing switching losses.
High reliability: Avalanche energy tolerance of 900 mJ, enhancing system robustness and suitability for harsh environments.
Optimised dynamic characteristics: Reverse transfer capacitance (Crss) of only 230 pF, reducing EMI radiation by over 30 dB.
Low thermal resistance design: The junction-to-case thermal resistance (Rthj-case) is only 0.8°C/W, improving heat dissipation efficiency.
Enhanced protection mechanisms: Overcurrent, overtemperature, and short-circuit protection enhance system safety.
Package optimisation: The 5×6mm PowerFLAT™ package supports high power density designs.
Silver sintering process reduces thermal resistance to one-third of traditional soldering processes.
STL220N6F7 Product Parameters
Drain-source voltage (Vdss): 60V
Continuous drain current (Id): 120A (operating temperature range: 0°C to 150°C)
Maximum power dissipation (Pd): 188W
Typical on-resistance (Rds(on)): 1.2mΩ (at 10V, 20A)
Maximum on-resistance (Rds(on)): 1.4 mΩ (at 10 V, 20 A)
Threshold voltage (Vgs(th)): Maximum 4 V (at 250 μA)
Thermal characteristics: Junction temperature range from -55°C to 175°C, thermal resistance (RthJC) at 25°C is 0.5°C/W
Gate charge (Qg): Maximum 98 nC (at 10 V)
Input capacitance (Ciss): Maximum 6600 pF (at 25 V)
Reverse transfer capacitance (Crss): 230 pF (at 25 V)
Model
Brand
Package
Quantity
Describe
IXYS
TO-252-3
5000
Surface Mount Type N-Channel 1200 V 200 mA (Tc) 33 W (Tc) TO-252AA
ST
PowerFLAT™ 5x6
15000
Automotive Grade N-Channel 80 V, 3.15 mOhm typical, 130 A STripFET F7 Power MOSFET, PowerFLAT 5x6 Package
ST
TO-247
8000
N-Channel 950 V, 0.110 Ohm Typ, 38 A MDmesh K5 Power MOSFET, TO-247 Package
ST
TO-247-3
1000
N-Channel 600 V, 61 mOhm Typ, 39 A MDmesh M6 Power MOSFET, TO-247 Package
ST
TO-220-3
50000
N-Channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET, TO-220FP Package
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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