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IXFN50N120SIC is a N-Channel 1200V 47A SiC MOSFET Module.

Specifications

Type: HiperFET

Technology: SiC

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Mounting Style: Screw Mount

Package/Case: SOT-227-4

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 155 C

Configuration: Single

Fall Time: 19 ns

Id - Continuous Drain Current: 47 A

Number of Channels: 1 Channel

Rds On - Drain-Source Resistance: 50 mOhms

Rise Time: 9 ns

Transistor Polarity: N-Channel

Typical Turn-Off Delay Time: 75 ns

Typical Turn-On Delay Time: 23 ns

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2 V

Unit Weight: 59.703 g

Features

High speed switchingwith low capacitances

High blocking voltagewith low RDS(on)

Easy to parallel and simple to drive

Avalanche ruggedness

Resistant to latch-up

Applications

Solar inverters

High voltage DC/DC converters

Motor drives

Switch mode power supplies

UPS

Battery chargers

Induction heating

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